? 2006 ixys corporation all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 100 v v gsm transient 30 v i d25 t c = 25 c44a i l package current limit, rms to-252a 25 a i dm t c = 25 c, pulse width limited by t jm 140 a i ar t c = 25 c10a e as t c = 25 c 250 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 18 ? p d t c = 25 c 130 w t j -55 ... +175 c t jm 175 c t stg -40 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3 g to-252 0.8 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a85v v gs(th) v ds = v gs , i d = 25 a 2.5 4.5 v i gss v gs = 20 v, v ds = 0 v 100 na i dss v ds = v dss 1 a v gs = 0 v t j = 150 c 100 a r ds(on) v gs = 10 v, i d = 22 a, notes 1, 2 22 30 m ? trenchmv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated IXTP44N10T ixty44n10t v dss = 100 v i d25 =44 a r ds(on) 30 m ? ? ? ? ? ds99646 (11/06) to-220 (ixtp) d s g d (tab) g = gate d = drain s = source tab = drain to-252 aa (ixty) d (tab) s g features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems distributed power architechtures and vrms electronic valve train systems high current switching applications high voltage synchronous recifier
ixys reserves the right to change limits, test conditions, and dimensions. IXTP44N10T ixty44n10t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 13 21 s c iss 1262 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 190 pf c rss 43 pf t d(on) resistive switching times 21 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 47 ns t d(off) r g = 18 ? (external) 36 n s t f 32 ns q g(on) 33 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 10 nc q gd 11 nc r thjc 1.15 c/w r thcs to-220 0.5 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 44 a i sm repetitive 140 a v sd i f = 25 a, v gs = 0 v, note 1 1.1 v t rr i f = 25 a, -di/dt = 100 a/ s 100 ns v r = 50 v, v gs = 0 v notes: 1. pulse test: t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-252 (ixty) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1 anode 2 nc 3 anode 4 cathode pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifica- tions offered are derived from data gathered during objective characteriza- tions of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved IXTP44N10T ixty44n10t fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 9v fig. 3. output characteristics @ 150oc 0 5 10 15 20 25 30 35 40 45 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 22a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 44a i d = 22a fig. 5. r ds(on) normalized to i d = 22a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 0 102030405060708090100110 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-252
ixys reserves the right to change limits, test conditions, and dimensions. IXTP44N10T ixty44n10t fig. 7. input admittance 0 10 20 30 40 50 60 70 44.555.566.577.588.59 v gs - volts i d - amperes t j = -40oc 25oc 150oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 0 10203040506070 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 q g - nanocoulombs v gs - volts v ds = 50v i d = 10a i g = 1ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved IXTP44N10T ixty44n10t fig. 14. resistive turn-on rise time vs. drain current 20 25 30 35 40 45 50 55 60 65 70 75 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t r - nanosecond s r g = 18 ? v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 110 120 130 15 20 25 30 35 40 45 50 55 60 r g - ohms t r - nanoseconds 18 20 22 24 26 28 30 32 34 36 38 40 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 30a i d = 10a fig. 16. resistive turn-off switching times vs. junction temperature 26 27 28 29 30 31 32 33 34 35 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 23 26 29 32 35 38 41 44 47 50 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 18 ? , v gs = 10v v ds = 50v i d = 10a i d = 30a fig. 17. resistive turn-off switching times vs. drain current 26 27 28 29 30 31 32 33 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t f - nanoseconds 22 26 30 34 38 42 46 50 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 18 ? , v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 25 30 35 40 45 50 55 60 65 70 75 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 18 ? v gs = 10v v ds = 50v i d = 30a i d = 10a fig. 18. resistive turn-off switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 15 20 25 30 35 40 45 50 55 60 r g - ohms t f - nanoseconds 30 40 50 60 70 80 90 100 110 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 30a i d = 10a ixys ref: t_44n10t (1v) 9-15-06-a.xls
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